MBR(F,B)30H35CT thru MBR(F,B)30H60CT
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Revision: 24-Oct-12
3
Document Number: 88866
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RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Derating Curve
Fig. 2 - Maximum Non-Repe
titive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
10
20
30
40
50
25
0
75 100 125 150 175
MBRF
MBR, MBRB
A
v
erage Forward C
u
rrent (A)
Case Temperature (°C)
1 10010
0
25
50
75
100
125
150
Number of Cycles at 60 Hz
Peak Forward S
u
rge C
u
rrent (A)
TJ
= T
J
Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
Instantaneous Forward Voltage (V)
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
TJ
= 150 °C
TJ
= 25 °C
TJ
= 125 °C
Instantaneo
u
s Forward C
u
rrent (A)
0 10060
80
40
20
0.0001
0.001
0.1
0.01
1
10
100
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse Leakage
C
u
rrent (mA)
TJ
= 150 °C
TJ
= 125 °C
TJ
= 25 °C
0.1 1
100
10
1000
100
10 000
Reverse Voltage (V)
J
u
nction Capaci
tance (pF)
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 mVp-p
0.01 0.1
0.1
1
1
10
10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
相关PDF资料
MBRD640CTT4G DIODE SCHOTTKY 40V 3A DPAK
MBRF10100CT-E3/4W DIODE ARR SCHOTTKY 100V 5A TO220
MBRF10H150CTG DIODE SCHOTTKY 150V 5A TO-220FP
MBRF2045CTG DIODE SCHOTTKY 45V 10A TO-220FP
MBRF2060CT DIODE SCHOTTKY 60V 10A TO-220FP
MBRF20H150CTG DIODE SCHOTTKY 20A 150V TO-220FP
MBRF20L45CTG DIODE SCHOTTKY 45V 10A TO-220FP
MBRF2545CTG DIODE SCHOTTKY 45V 12.5A TO220FP
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